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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP11N60ED/D Designer'sTM Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co-packaged IGBTs save space, reduce assembly time and cost. This new E-series introduces an energy efficient, ESD protected, and rugged short circuit device. * Industry Standard TO-220 Package * High Speed: Eoff = 60 mJ per Amp typical at 125C * High Voltage Short Circuit Capability - 10 ms minimum at 125C, 400 V * Low On-Voltage -- 2.0 V typical at 8.0 A * Soft Recovery Free Wheeling Diode is included in the Package * Robust High Voltage Termination * ESD Protection Gate-Emitter Zener Diodes MGP11N60ED IGBT & DIODE IN TO-220 11 A @ 90C 15 A @ 25C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE C G G C E CASE 221A-09 STYLE 9 TO-220AB E MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Collector Current -- Continuous @ TC = 25C -- Continuous @ TC = 90C -- Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RJC RJC RJA TL Value 600 600 20 15 11 22 96 0.77 - 55 to 150 10 1.3 2.3 65 260 10 lbfSin (1.13 NSm) Unit Vdc Vdc Vdc Adc Apk Watts W/C C ms C/W C Designer'sTM is a trademark of Motorola, Inc. (c) Motorola IGBT Device Motorola, Inc. 1998 Data 1 MGP11N60ED ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector-to-Emitter On-State Voltage (VGE = 15 Vdc, IC = 4.0 Adc) (VGE = 15 Vdc, IC = 4.0 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 8.0 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 8.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Switching Loss Turn-On Switching Loss Total Switching Loss Gate Charge (VCC = 360 Vdc, IC = 8 0 Adc Vdc 8.0 Adc, VGE = 15 Vdc) DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 3.25 Adc) (IEC = 3.25 Adc, TJ = 125C) (IEC = 6.5 Adc) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. VFEC -- -- 1.7 1.63 1.24 2.0 -- -- 2.3 (continued) Vdc (VCC = 360 Vdc, IC = 8 0 Ad Vd 8.0 Adc, VGE = 15 Vdc, L = 300 mH Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vdc, IC = 8 0 Ad Vd 8.0 Adc, VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 ) Energy losses include "tail" td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets QT Q1 Q2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 46 34 102 226 0.32 0.11 0.43 42 26 214 228 0.48 0.16 0.64 39.2 8.7 17.4 -- -- -- -- 0.40 -- -- -- -- -- -- -- -- -- -- -- -- nC mJ ns mJ ns (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Cies Coes Cres -- -- -- 779 81 13 -- -- -- pF VCE(on) -- -- -- VGE(th) 4.0 -- gfe -- 6.0 10 3.5 8.0 -- -- 1.6 1.5 2.0 1.9 -- 2.4 Vdc mV/C Mhos Vdc V(BR)CES 600 -- ICES -- -- IGES -- -- -- -- 10 200 50 Adc -- 870 -- -- Vdc mV/C Adc Symbol Min Typ Max Unit 2 Motorola IGBT Device Data MGP11N60ED ELECTRICAL CHARACTERISTICS -- continued (TJ = 25C unless otherwise noted) Characteristic DIODE CHARACTERISTICS -- continued Reverse Recovery Time ( (IF = 8 0 Ad , VR = 360 Vdc, 8.0 Adc, Vd , dIF/dt = 200 A/s) Reverse Recovery Stored Charge Reverse Recovery Time ( (IF = 8 0 Ad , VR = 360 Vdc, 8.0 Adc, Vd , dIF/dt = 200 A/s, TJ = 125C) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) 25 IC , COLLECTOR CURRENT (AMPS) TJ = 25C 20 20 V 15 V 25 20 V IC , COLLECTOR CURRENT (AMPS) 12.5 V 17.5 V 20 15 V 12.5 V LE -- 7.5 -- nH trr ta tb QRR trr ta tb QRR -- -- -- -- -- -- -- -- 57 18 39 107 91 28 63 275 -- -- -- -- -- -- -- -- C C ns ns Symbol Min Typ Max Unit 17.5 V 15 VGE = 10 V 10 15 VGE = 10 V 10 5 0 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 5 TJ = 125C 0 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics Figure 2. Output Characteristics VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 24 IC , COLLECTOR CURRENT (AMPS) 20 16 12 8 TJ = 125C 4 25C 0 5 7 9 11 13 15 17 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) VCE = 100 V 5 ms PULSE WIDTH 2.25 VGE = 15 V 80 ms PULSE WIDTH 2.05 IC = 8.0 A 1.85 6.0 A 1.65 4.0 A 1.45 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-To-Emitter Saturation Voltage versus Junction Temperature Motorola IGBT Device Data 3 MGP11N60ED TJ = 25C VGE = 0 V Cies 800 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 20 1600 C, CAPACITANCE (pF) 16 QT 12 Q1 8 TJ = 25C VCC = 300 V IC = 8.0 A Q2 Coes Cres 4 0 0 10 20 30 0 0 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 40 50 Qg, TOTAL GATE CHARGE (nC) Figure 5. Capacitance Variation Figure 6. Gate-To-Emitter Voltage versus Total Charge 0.8 ETS , TOTAL ENERGY LOSSES (mJ) 0.85 ETS , TOTAL ENERGY LOSSES (mJ) 0.75 0.65 6.0 A 0.55 0.45 0.35 0.25 0.15 5 15 25 35 45 55 RG, GATE RESISTANCE (OHMS) 4.0 A TJ = 125C VDD = 360 V VGE = 15 V IC = 8.0 A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 VCC = 360 V VGE = 15 V RG = 20 W IC = 8.0 A 6.0 A 4.0 A -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7. Total Energy Losses versus Gate Resistance Figure 8. Total Energy Losses versus Junction Temperature 0.9 ETS , TOTAL ENERGY LOSSES (mJ) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.6 Eoff , TURN-OFF ENERGY LOSSES (mJ) TJ = 125C VCC = 360 V VGE = 15 V RG = 20 W TJ = 125C VDD = 360 V VGE = 15 V IC = 8.0 A 0.5 0.4 6.0 A 0.3 4.0 A 0.2 2 4 6 8 10 5 15 25 35 45 IC, COLLECTOR CURRENT (AMPS) RG, GATE RESISTANCE (OHMS) Figure 9. Total Energy Losses versus Collector Current Figure 10. Turn-Off Losses versus Gate Resistance 4 Motorola IGBT Device Data MGP11N60ED Eoff , TURN-OFF ENERGY LOSSES (mJ) 0.6 Eoff , TURN-OFF ENERGY LOSSES (mJ) VCC = 360 V VGE = 15 V RG = 20 W IC = 8.0 A 0.4 6.0 A 0.6 TJ = 125C VCC = 360 V VGE = 15 V RG = 20 W 0.4 0.2 4.0 A 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) 0 0 2 4 6 8 10 IC, COLLECTOR CURRENT (AMPS) Figure 11. Turn-Off Losses versus Junction Temperature 100 IF , INSTANTANEOUS FORWARD CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS) Figure 12. Turn-Off Losses versus Collector Current 100 TJ = 125C 10 25C 10 TJ = 125C RGE = 20 W VGE = 15 V 1 1 0.5 1.0 1.5 2.0 2.5 3.0 VFEC, EMITTER-TO-COLLECTOR VOLTAGE (VOLTS) 1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 13. Forward Characteristics versus Current Figure 14. Reverse Biased Safe Operating Area Motorola IGBT Device Data 5 MGP11N60ED PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 9: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J CASE 221A-09 TO-220AB ISSUE Z GATE COLLECTOR EMITTER COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 6 MGP11N60ED/D Motorola IGBT Device Data |
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